SPN8854 Key Features
- 150V/68A, RDS(ON)=17 mΩ@VGS=10V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- Part: SPN8854
- Manufacturer: SYNC POWER
- Size: 337.00 KB
Related SYNC POWER Datasheets
| Part Number | Description |
|---|---|
| SPN8852 | N-Channel MOSFET |
| SPN8810 | N-Channel MOSFET |
| SPN8812 | N-Channel MOSFET |
| SPN8822 | Dual N-Channel MOSFET |
| SPN8822A | Dual N-Channel MOSFET |
SPN8854 Description
The SPN8854 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8854 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.